Numerical simulation of crystallization process in recording media with phase-structure writing mechanism

The thermal crystallization process dynamics in a reversible recording medium on the base of chalcogenide semiconductors was studied by means of numerical simulation. The Kolmogorov-Avraami equation was used for nonisothermal crystallization process simulation. The spatial-temporal distribution of crystalline phase in the writing area was obtained. The writing modes under which a uniform distribution of crystalline phase in the irradiated area is achieved were investigated.