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High performance nanoscale n-MOS gate-all-around poly-Si thin film transistors by microwave annealing

Authors :
Z. Y. Tang
Yung-Chun Wu
Y. J. Lee
H. F. Hung
M. S. Yeh
Source :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Publication Year :
2012
Publisher :
The Japan Society of Applied Physics, 2012.

Subjects

Subjects :
Materials science
business.industry
Thin-film transistor
Microwave annealing
Optoelectronics
business
Nanoscopic scale

Details

Database :
OpenAIRE
Journal :
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials
Accession number :
edsair.doi...........f002d7538cc4fea48a21c7c167e8253c
Full Text :
https://doi.org/10.7567/ssdm.2012.e-1-4
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