Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications

MLA

M. Takahashi, et al. “Sub-100 Nm InGaAs Quantum-Well (QW) Tri-Gate MOSFETs with Al2O3/HfO2 (EOT < 1 Nm) for Low-Power Logic Applications.” 2013 IEEE International Electron Devices Meeting, Dec. 2013. EBSCOhost, https://doi.org/10.1109/iedm.2013.6724641.

APA

M. Takahashi, C. Y. Kang, Hill Richard J, Donghyi Koh, Rock-Hyun Baek, T. Nishizuka, David Gilmer, Craig Huffman, H. Nakajima, W. Maszara, A. Ko, Dmitry Veksler, Sanjay K. Banerjee, Tae-Woo Kim, S. H. Shin, H. Ohtake, Y. Ohsawa, Hm. Kwon, Andrew M. Greene, … Paul Kirsch. (2013). Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications. 2013 IEEE International Electron Devices Meeting. https://doi.org/10.1109/iedm.2013.6724641

Chicago

M. Takahashi, C. Y. Kang, Hill Richard J, Donghyi Koh, Rock-Hyun Baek, T. Nishizuka, David Gilmer, et al. 2013. “Sub-100 Nm InGaAs Quantum-Well (QW) Tri-Gate MOSFETs with Al2O3/HfO2 (EOT < 1 Nm) for Low-Power Logic Applications.” 2013 IEEE International Electron Devices Meeting, December. doi:10.1109/iedm.2013.6724641.