Investigation of p-Type MOS Structure Irradiated with 23 MeV Electrons

p-type silicon MOS structures were irradiated with 23 MeV electrons in vacuum for different durations. Capacitance-voltage (C/V), current-voltage (I/V) and conductance-voltage (G/V) methods were used to investigate the changes in the electrical characteristic of the MOS structures after electron irradiation. Our results show that high-energy electron irradiation generates positive charges in the oxide and at the Si-SiO 2 interface, which are frequency dependent. After electron irradiation, two kinds of interface traps are determined. The traps energy position evaluated by these three independent methods is very close to E v + 0.16 eV and B v + 0.36 eV. As these results are in a very good agreement with our earlier results, obtained by TSC and DLTS methods, the observed traps can be attributed to the boron- (V/B) and oxygen (V/O) vacancies complexes.