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Surface Assembly Strategy for the Fabrication of MoS2 Thin-Film Patterns
- Source :
- International Journal of Precision Engineering and Manufacturing. 20:2215-2220
- Publication Year :
- 2019
- Publisher :
- Springer Science and Business Media LLC, 2019.
-
Abstract
- Molybdenum disulfide (MoS2) is a novel material with remarkable properties that is widely investigated for future applications in electronics, sensors, and smart materials. In this respect, a low cost, easy process, large-area mass production process is needed to obtain diverse structures and surface patterns of MoS2. Here, we demonstrate an effective MoS2 patterning process using substrate surface modification that can solve the difficulties encountered in previous studies. This technique utilizes the sulfur vacancies introduced during chemical exfoliation of MoS2 flakes. The MoS2 patterning is performed via surface modification with thiol molecules on the substrate in pre-designed shapes. The thiol (–SH) group required to bond MoS2 to the surface-modified substrate using (3-mercaptopropyl)trimethoxysilane was confirmed by FT-IR and the patterned MoS2 was confirmed by Raman shift. Through this process, a gas sensor was fabricated and its feasibility was confirmed to show its applicability to various applications MoS2.
- Subjects :
- 0209 industrial biotechnology
Materials science
Fabrication
Mechanical Engineering
Nanotechnology
02 engineering and technology
Substrate (printing)
Smart material
Exfoliation joint
Industrial and Manufacturing Engineering
chemistry.chemical_compound
symbols.namesake
020303 mechanical engineering & transports
020901 industrial engineering & automation
0203 mechanical engineering
chemistry
symbols
Surface modification
Electrical and Electronic Engineering
Thin film
Raman spectroscopy
Molybdenum disulfide
Subjects
Details
- ISSN :
- 20054602 and 22347593
- Volume :
- 20
- Database :
- OpenAIRE
- Journal :
- International Journal of Precision Engineering and Manufacturing
- Accession number :
- edsair.doi...........ef49afa7fa3ad496ecb5c6c6b79de81d
- Full Text :
- https://doi.org/10.1007/s12541-019-00207-9