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Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor

Authors :
A. I. Yakimov
A. V. Dvurechenskii
V. V. Kirienko
A. I. Nikiforov
Source :
Applied Physics Letters. 80:4783-4785
Publication Year :
2002
Publisher :
AIP Publishing, 2002.

Abstract

We report on the operation of Si metal–oxide–semiconductor field-effect transistor with an array of ∼103 10 nm diameter Ge self-assembled quantum dots embedded into the active channel. The drain current versus gate voltage characteristics show oscillations caused by Coulomb interaction of holes in the fourfold-degenerate excited state of the dots at T⩽200 K. A dot charging energy of ∼43 meV (i.e., >kT=26 meV at T=300 K) and disorder energy of ∼20 meV are determined from the oscillation period and the temperature dependence study of current maxima, respectively.

Details

ISSN :
10773118 and 00036951
Volume :
80
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........ef34c6d65307f45fdd6af0370b5ef960