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Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor
- Source :
- Applied Physics Letters. 80:4783-4785
- Publication Year :
- 2002
- Publisher :
- AIP Publishing, 2002.
-
Abstract
- We report on the operation of Si metal–oxide–semiconductor field-effect transistor with an array of ∼103 10 nm diameter Ge self-assembled quantum dots embedded into the active channel. The drain current versus gate voltage characteristics show oscillations caused by Coulomb interaction of holes in the fourfold-degenerate excited state of the dots at T⩽200 K. A dot charging energy of ∼43 meV (i.e., >kT=26 meV at T=300 K) and disorder energy of ∼20 meV are determined from the oscillation period and the temperature dependence study of current maxima, respectively.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Oscillation
business.industry
Transistor
Semiconductor device
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
law.invention
Quantum dot
law
Excited state
MOSFET
Optoelectronics
Field-effect transistor
business
Quantum well
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 80
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........ef34c6d65307f45fdd6af0370b5ef960