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An ultra-low power CMOS random number generator

Authors :
Sheng-hua Zhou
Nanjian Wu
Wancheng Zhang
Source :
Solid-State Electronics. 52:233-238
Publication Year :
2008
Publisher :
Elsevier BV, 2008.

Abstract

This paper proposes an ultra-low power CMOS random number generator (RNG), which is based on an oscillator-sampling architecture. The noisy oscillator consists of a dual-drain MOS transistor, a noise generator and a voltage control oscillator. The dual-drain MOS transistor can bring extra-noise to the drain current or the output voltage so that the jitter of the oscillator is much larger than the normal oscillator. The frequency division ratio of the high-frequency sampling oscillator and the noisy oscillator is small. The RNG has been fabricated in a 0.35 μm CMOS process. It can produce good quality bit streams without any post-processing. The bit rate of this RNG could be as high as 100 kbps. It has a typical ultra-low power dissipation of 0.91 μW. This novel circuit is a promising unit for low power system and communication applications.

Details

ISSN :
00381101
Volume :
52
Database :
OpenAIRE
Journal :
Solid-State Electronics
Accession number :
edsair.doi...........ef000114d221bd9ca00d81b36cbca74c