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Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction
- Source :
- Applied Physics Letters. 79:66-68
- Publication Year :
- 2001
- Publisher :
- AIP Publishing, 2001.
-
Abstract
- We have performed a magnetotransport study on an AlGaN/GaN heterostructure at low temperatures. The effective-mass values have been evaluated by analyzing the exact form of the temperature-dependent Shubnikov–de Haas oscillation function. The values obtained increase with the magnetic field. This mass enhancement is attributed to conduction-band nonparabolicity. The effective-mass variation with the magnetic field was extrapolated to zero field, together with further correction due to the triangular confinement of the carriers, yielding an effective mass of 0.185±0.005 of the free-electron mass. Our result is in excellent agreement with the results obtained by first-principle calculations and the tight-binding method, and suggest the significance of magnetic-field-induced nonparabolicity in transport measurements.
- Subjects :
- Mass enhancement
Closed and exact differential forms
Effective mass (solid-state physics)
Physics and Astronomy (miscellaneous)
Zero field
Condensed matter physics
Chemistry
Wide-bandgap semiconductor
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Shubnikov–de Haas effect
Magnetic field
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 79
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........eedc4a269d8b977a21dd4cbe7aa02f40
- Full Text :
- https://doi.org/10.1063/1.1380245