Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

Room temperature intersubband electroabsorption modulation in GaN∕AlN coupled quantum wells is demonstrated at short infrared wavelengths, covering the fiber-optics telecommunication wavelength range. Electroabsorption modulation with opposite sign is observed at λ=1.2–1.67μm and λ=2.1–2.4μm. The electromodulation originates from electron tunneling between a wide well (reservoir) and a narrow well separated by an ultrathin AlN barrier. Both the intersubband absorption and the modulation spectroscopic measurements are in good agreement with the simulations. The maximum modulation depth is ∼44% at λ=2.2μm. The −3dB cutoff frequency limited by the RC time constant is 11.5MHz for 700×700μm2 mesas.