The separation of thin single crystal films from bulk diamond by MeV implantation

A technique has been developed whereby a thin layer (∼ 1 μm thick) can be removed, intact, from the surface of a single-crystal diamond. This process involves the creation of a sacrificial layer below the crystal's surface by ion implantation followed by selective etching of this sacrificial layer in order to free the overlying diamond plate. In combination with homoepitaxial growth of diamond films by chemical vapor deposition (CVD), this process presents the possibility of generating multiple single-crystal diamond wafers from one regenerative substrate. Such a method might make diamond a cost effective material for microelectronics applications. We have also combined this lift-off technique with a technique for patterning diamond with an excimer laser microbeam to produce free-standing diamond components with submillimeter dimensions. In this paper we discuss the lift-off technique and give some examples of its application to diamond micromachining.