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Fabrication of single-electron tunneling devices
- Source :
- Proceedings of 20th Biennial Conference on Precision Electromagnetic Measurements.
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- We have fabricated very small Al/AlO/sub x//Al junctions connected in series using electron-beam lithography and double-angle evaporation techniques. The average junction area is obtained to be 150/spl times/150 nm/sup 2/.
Details
- Database :
- OpenAIRE
- Journal :
- Proceedings of 20th Biennial Conference on Precision Electromagnetic Measurements
- Accession number :
- edsair.doi...........edaa3bc9f0ccaa307c4b92a02fd5b7fc
- Full Text :
- https://doi.org/10.1109/cpem.1996.547063