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Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its use for developing cyclostationary circuit simulation models
- Source :
- IEEE Transactions on Electron Devices. 50:1353-1362
- Publication Year :
- 2003
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2003.
-
Abstract
- The simulation of generation-recombination (GR) noise under periodic large-signal conditions in a partial differential equation-based silicon device simulator is presented. Using the impedance-field method with cyclostationary noise sources, it is possible to simulate the self- and cross-spectral densities between sidebands of a periodic large-signal stimulus. Such information is needed to develop noise correlation matrices for use with a circuit simulator. Examples are provided which demonstrate known results for shot noise in bipolar junction transistors. Additional results demonstrate the upconversion of low-frequency GR noise for microscopically cyclostationary noise sources and provide evidence for applying the modulated stationary noise model for low-frequency noise when there is a nearly quadratic current dependence.
Details
- ISSN :
- 00189383
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........ed826e96a59445b8879cb7844d19875d