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Enriching of the Si3N4-thermal oxide interface by excess silicon in
- Source :
- Microelectronic Engineering. 36:123-124
- Publication Year :
- 1997
- Publisher :
- Elsevier BV, 1997.
- Subjects :
- Materials science
Silicon
business.industry
Interface (Java)
chemistry.chemical_element
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Thermal oxide
chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 01679317
- Volume :
- 36
- Database :
- OpenAIRE
- Journal :
- Microelectronic Engineering
- Accession number :
- edsair.doi...........ed62709087724447dd028d77f8519ae6