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Spectral, electrical, magnetic and radiation shielding studies of Mg-doped Ni–Cu–Zn nanoferrites

Authors :
Hesham M.H. Zakaly
O. M. Hemeda
Mohsen M. Mostafa
A. M. A. Henaish
B. I. Salem
Shams A.M. Issa
Ilya Weinstein
Source :
Journal of Materials Science: Materials in Electronics. 31:20210-20222
Publication Year :
2020
Publisher :
Springer Science and Business Media LLC, 2020.

Abstract

Nanoferrites of Ni0.1Cu0.2MgxZn(0.7−x)Fe2O4 (x = 0.0, 0.15, 0.25, 0.35, 0.45, 0.55 and 0.70 wt%) system fabricated using flash auto combustion technique. All investigated samples annealed for 2 h at 600 °C. XRD, FTIR and TEM were utilized to evaluate the structural characterization of as-prepared samples. The electrical DC resistivity of the investigated samples is evaluated as a function of frequency and temperature. The initial magnetic permeability (μi) is dependent on the temperature and was measured at constant frequency 1 kHz and 10 kHz of the sinusoidal wave. A single-phase of spinel structure was formed and with increasing Mg content the peak (311) of 100% intensity decreases, which demonstrates the presence of Mg, which slows down the growth of the crystal as X-ray result. The FTIR spectra of the prepared ferrite samples are distinguished by the presence of two strong absorption bands (ν1 = 554 cm−1) and (ν2 = 449 cm−1). The morphological observation is determined by the transmission electron microscopy (TEM) and shows that the particles size ranged between 26 and 39 nm. It can notice shifted Curie temperature (Tc) to a higher temperature by increasing Mg content. Mass attenuation coefficient (μm), mean free path (λ), half value layer (X1/2), tenth value layer (X1/10) and effective atomic numbers (Zeff) for the studied samples, have been simulated using FLUKA (2020.0beta.2), while energy change from 15 × 10–3 to 153+ keV with increasing Mg concentration, both μm and Zeff decrease. The largest value of μm and Zeff when x = 0% while sample x = 0.35% has a minimum value of λ, X1/10 and X1/2.

Details

ISSN :
1573482X and 09574522
Volume :
31
Database :
OpenAIRE
Journal :
Journal of Materials Science: Materials in Electronics
Accession number :
edsair.doi...........ed2d0bdb9d4f6632a468f781f559f435