Investigations on the Diffusion of Boron in SiGe Mixed Crystals

By studying the quadrupolar interaction of 12B in silicon-germanium mixed crystals with the β-NMR method, the boron-germanium pair was identified and the saturation amplitudes for boron in differently composed crystals were measured. The relative saturation amplitudes agree with statistical predictions. At low temperatures boron is preferentially implanted into stable interstitial sites. These sites are converted into substitutional sites by diffusion processes which take advantage of reorientation jumps.