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Multi-gate BCAT Structure and Select Word-line Driver in DRAM for Reduction of GIDL

Authors :
Chang-Young Lim
Min-Woo Kwon
Source :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 22:452-458
Publication Year :
2022
Publisher :
The Institute of Electronics Engineers of Korea, 2022.

Subjects

Subjects :
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Details

ISSN :
22334866 and 15981657
Volume :
22
Database :
OpenAIRE
Journal :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Accession number :
edsair.doi...........ec78b50b99f84d63197e49a16128037b
Full Text :
https://doi.org/10.5573/jsts.2022.22.6.452
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