Analysis of light elements in superposed layers by Monte Carlo simulation of EELS spectra

A Monte Carlo code, previously set up to simulate electron energy loss spectra of carbon films on silicon at 100 kV, has been extended to the analysis, at 300 kV, of a Si/SiO 2/ Si structure; the final goal is the determination of the oxygen concentration in SiO x precipitates embedded in a Si matrix. The upgrading of the programme has required the introduction of relativistic kinematics and relativistic corrections to elastic and inelastic cross sections. The Si/SiO 2 /Si samples have been prepared by CVD deposition of a 16 nm thick silicon film onto a silicon wafer covered with a 11 nm thick thermal oxide. The thickness of both films has been checked by transmission electron microscopy on cross sections