A nano scale triple-gate transistors to suppress the aggregated body holes

New silicon on insulator triple-gate transistor structure is presented by using Silicon- Germanium material in the source and the buried oxide region which creates a tunneling diode to reduce the generated holes by impact ionization in the channel. The Kink effect, self-heating effect, and recombination reduce in the proposed structure by collecting holes in the channel. In this paper, we study the improvement of off current, output resistance, hole concentration, electric field, heat power, and drain induced barrier lowering (DIBL) of the proposed structure in comparison with a conventional triple-gate transistor.