Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation

MLA

Chia-Hsiang Chen, et al. “Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation.” Electrochemical and Solid-State Letters, vol. 14, Jan. 2011, p. H177. EBSCOhost, https://doi.org/10.1149/1.3534828.

APA

Chia-Hsiang Chen, Min-Chen Chen, Chun-Hao Tu, Jiun Jye Chang, Sheng-Yao Huang, Wei-Lung Liau, Ting-Chang Chang, Ming-Chin Hung, Chih-Tsung Tsai, & Shih-Ching Chen. (2011). Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation. Electrochemical and Solid-State Letters, 14, H177. https://doi.org/10.1149/1.3534828

Chicago

Chia-Hsiang Chen, Min-Chen Chen, Chun-Hao Tu, Jiun Jye Chang, Sheng-Yao Huang, Wei-Lung Liau, Ting-Chang Chang, Ming-Chin Hung, Chih-Tsung Tsai, and Shih-Ching Chen. 2011. “Effects of Ambient Atmosphere on Electrical Characteristics of Al2O3 Passivated InGaZnO Thin Film Transistors during Positive-Bias-Temperature-Stress Operation.” Electrochemical and Solid-State Letters 14 (January): H177. doi:10.1149/1.3534828.