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Modelling of inductively coupled plasma processing reactors

Authors :
T. R. Govindan
Meyya Meyyappan
David Hash
Deepak Bose
Source :
Journal of Physics D: Applied Physics. 34:2742-2747
Publication Year :
2001
Publisher :
IOP Publishing, 2001.

Abstract

A comprehensive model has been developed to study low-pressure, high-density plasma processing reactors. The model couples plasma generation and transport self-consistently to fluid flow and gas energy equations. The model and the simulation software have been used to analyse chlorine plasmas used in metal etching. The effect of the inductive coil frequency on the plasma characteristics has been examined and found to influence plasma uniformity only moderately. Model predictions for a CF4 plasma have been found to agree well with experimental results.

Details

ISSN :
13616463 and 00223727
Volume :
34
Database :
OpenAIRE
Journal :
Journal of Physics D: Applied Physics
Accession number :
edsair.doi...........eb98da7a40c1465de9d334989dc675f0
Full Text :
https://doi.org/10.1088/0022-3727/34/18/305