Photovoltaic detectors based on porous silicon heterostructures

Photosensitivity of single and double heterostructures based on porous silicon was investigated. A number of double heterostructures were created by formation of the optical contacts on porSi/Si heterostructures and GeSe single crystal thin plate (d approximately 20micrometers ). Wide band photovoltaic sensitivity from 0.4 to 1.2 micrometers was observed for different heterostructures. The behavior of experimental curves was explained using energy band configuration. GaSe/porSi/Si heterostructures were also highly sensitive to mechanical stresses. It was concluded that heterostructures based on GaSe/porSi/Si plates might find their application as wide-band photo converters and tenzosensitive devices.