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Nitrogen incorporation in SnO2thin films grown by chemical vapor deposition
- Source :
- physica status solidi (b). 253:1087-1092
- Publication Year :
- 2016
- Publisher :
- Wiley, 2016.
-
Abstract
- The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO2–xNx thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO2–xNx films with increasing x are found by X-ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X-ray photoelectron spectroscopy, attributed to the N3− ion in the SnN bond. The increase of the N atomic concentration x in SnO2–xNx films from 0 to 7.9 at.% without phase separation with increasing NH3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.
- Subjects :
- Chemistry
Inorganic chemistry
02 engineering and technology
Chemical vapor deposition
Combustion chemical vapor deposition
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
symbols.namesake
Carbon film
X-ray photoelectron spectroscopy
Plasma-enhanced chemical vapor deposition
symbols
Deposition (phase transition)
Thin film
0210 nano-technology
Raman spectroscopy
Subjects
Details
- ISSN :
- 03701972
- Volume :
- 253
- Database :
- OpenAIRE
- Journal :
- physica status solidi (b)
- Accession number :
- edsair.doi...........eb585c8023f13b9fb1d0de0f9ed724a9