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Scaling the CBRAM Switching Layer Diameter to 30 nm Improves Cycling Endurance
- Source :
- IEEE Electron Device Letters. 39:23-26
- Publication Year :
- 2018
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2018.
-
Abstract
- Control of cation injection into the switching layer of conductive-bridge random access memory (CBRAM) during switching is a critical factor for CBRAM reliability. Although extrinsic approaches such as the insertion of a transistor in series have proven effective, solutions intrinsic to the CBRAM itself, which are desired for high density cross-point or 3-D vertical memory arrays, are quite limited. In this letter, we show the significant improvement of cycling endurance for Cu-based CBRAM by scaling the switching layer area down to 30 nm in diameter. Further study suggests that the injection of excessive Cu ions into the switching layer is suppressed owing to spatial limitation during the formation of the conductive filament. These results indicate that the area scaling of the switching layer is an effective solution for achieving highly reliable CBRAM devices.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Programmable metallization cell
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
Effective solution
law.invention
Resistive random-access memory
Reliability (semiconductor)
law
0103 physical sciences
Electrode
Optoelectronics
Electrical and Electronic Engineering
0210 nano-technology
business
Layer (electronics)
Scaling
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........eb054aa09841f5fe59d348d64b08d198