TRANSPORT AND ELECTRONIC PROPERTIES OF TWO DIMENSIONAL ELECTRON GAS IN DELTA-MIGFET IN GAAS

The objective of this work is to analyze electronic transport phenomena, due to ionized impurity scattering in δ-MIGFET (Delta-Multiple Independent Gate Field Effect Transistor). In this work, we report theoretical results for electronic transport in a delta-MIGFET using the device electronic structure and analytical expression of mobility and conductivity. The results show that the analytical mobility and conductivity are a good way to analyze Received 13 August 2010, Accepted 14 October 2010, Scheduled 10 November 2010 Corresponding author: Outmane Oubram (oubram@uaem.mx). † Also with Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-360, Mexico D.F 04510, Mexico.