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Homoepitaxial growth of single crystalline CVD-diamond
- Source :
- Diamond and Related Materials. 64:1-7
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- The influence of temperature, pressure and holder geometry on the homoepitaxial single crystalline diamond growth in a microwave-assisted chemical vapor deposition reactor will be introduced and discussed in detail. Optimized diamond growth conditions were determined for homoepitaxy on (100)-oriented high-temperature high-pressure (HPHT) seed crystals using Raman scattering and confocal-micro-photoluminescence spectroscopy measurements.
- Subjects :
- 010302 applied physics
Materials science
Mechanical Engineering
Material properties of diamond
Diamond
Nanotechnology
02 engineering and technology
General Chemistry
Chemical vapor deposition
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Electronic, Optical and Magnetic Materials
symbols.namesake
Chemical engineering
0103 physical sciences
Materials Chemistry
symbols
engineering
Electrical and Electronic Engineering
0210 nano-technology
Spectroscopy
Seed crystal
Raman scattering
Subjects
Details
- ISSN :
- 09259635
- Volume :
- 64
- Database :
- OpenAIRE
- Journal :
- Diamond and Related Materials
- Accession number :
- edsair.doi...........ea88d5f9eebd7aefc7e4cbfc2ab2da2e