Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique

MLA

Kazuhiko Kusunoki, et al. “Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique.” Materials Science Forum, vol. 924, June 2018, pp. 31–34. EBSCOhost, https://doi.org/10.4028/www.scientific.net/msf.924.31.

APA

Kazuhiko Kusunoki, Koji Moriguchi, Yutaka Kishida, Motohisa Kado, Takayuki Shirai, Mitustoshi Akita, Kazuaki Seki, Hironori Daikoku, Hiroaki Saito, & Hiroshi Kaido. (2018). Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique. Materials Science Forum, 924, 31–34. https://doi.org/10.4028/www.scientific.net/msf.924.31

Chicago

Kazuhiko Kusunoki, Koji Moriguchi, Yutaka Kishida, Motohisa Kado, Takayuki Shirai, Mitustoshi Akita, Kazuaki Seki, Hironori Daikoku, Hiroaki Saito, and Hiroshi Kaido. 2018. “Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique.” Materials Science Forum 924 (June): 31–34. doi:10.4028/www.scientific.net/msf.924.31.