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Room temperature piezoelectric displacement detection via a silicon field effect transistor

Authors :
Hiroshi Yamaguchi
Imran Mahboob
Akira Fujiwara
Katsuhiko Nishiguchi
Source :
Applied Physics Letters. 95:233102
Publication Year :
2009
Publisher :
AIP Publishing, 2009.

Abstract

An electromechanical oscillator embedded with a two dimensional electron gas is capacitively coupled to a silicon field effect transistor (Si-FET). The piezovoltage induced by the mechanical motion modulates the current passing through the Si-FET enabling the electromechanical oscillator’s position to be monitored. When the Si-FET is biased at its optimal point, the motion induced piezovoltage can be amplified resulting in a displacement sensitivity of 6×10−12 mHz−1/2 for a 131 kHz GaAs resonator which is among the highest recorded for an all-electrical room temperature detection scheme.

Details

ISSN :
10773118 and 00036951
Volume :
95
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........ea05d45b210dffd9a071bf03713c4f6a
Full Text :
https://doi.org/10.1063/1.3271525