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Analysis of Pressure-Induced Whisker Nucleation and Growth in Thin Sn Films
- Source :
- Journal of Electronic Materials. 50:6639-6653
- Publication Year :
- 2021
- Publisher :
- Springer Science and Business Media LLC, 2021.
-
Abstract
- A recent publication (Jagtap et al. Scr Mat 182:43, 2020) reported real-time observations of stress-driven whisker nucleation and growth in a thin film of Sn subjected to pressure on part of its surface. This paper describes a model of the experiment. Predicted whisker volume in the film adjacent to the loaded area is in good agreement with experimental measurements. The model also predicts correctly the variation of whisker density with distance from the punch at the end of the experiment but underestimates the rate of whisker nucleation during the first 50 h after the film is loaded. Comparison of model predictions with experiments provides clear evidence for a threshold stress for whisker growth, with an initial value of 17 MPa, which increases with whisker length to a saturated value of 22 MPa after whiskers reach a length of 19 µm. Implications for whisker growth in Sn films on Cu substrates are discussed.
- Subjects :
- Materials science
Solid-state physics
Whiskers
Nucleation
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Volume (thermodynamics)
Whisker
Materials Chemistry
Stress relaxation
Grain boundary diffusion coefficient
Electrical and Electronic Engineering
Thin film
Composite material
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 50
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........e9ea4792a2e9fcc4e1eb4c0e5681db8c