Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 /spl mu/m lasers on gallium arsenide

Summary form only given. Recent progress in wavelength tuning of InAs/InGaAs/GaAs self-assembled quantum dots (QDs) has shown that this system represents an adequate active material for 1.3 /spl mu/m lasers on gallium arsenide. Integration of 1.3 /spl mu/m QDs in a GaAs/AlGaAs vertical-cavity surface-emitting laser structure would allow the development of a low-cost laser module for 1.3 /spl mu/m fiber links. Embedding the QDs in a InGaAs quantum well (QW) has been proposed as an effective way to red-shift the emission wavelength to the 1.3 /spl mu/m region. In-plane lasers with low threshold current densities