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Spatial Distribution of Carrier Concentration in 4H-SiŠ” Crystal Grown by Solution Method
- Source :
- Materials Science Forum. 858:57-60
- Publication Year :
- 2016
- Publisher :
- Trans Tech Publications, Ltd., 2016.
-
Abstract
- We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method from the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.
- Subjects :
- Morphology (linguistics)
Materials science
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
01 natural sciences
Crystal
Condensed Matter::Materials Science
symbols.namesake
Adsorption
Impurity
0103 physical sciences
General Materials Science
010302 applied physics
geography
geography.geographical_feature_category
Mechanical Engineering
Doping
021001 nanoscience & nanotechnology
Condensed Matter Physics
Nitrogen
chemistry
Terrace (geology)
Mechanics of Materials
symbols
0210 nano-technology
Raman spectroscopy
Subjects
Details
- ISSN :
- 16629752
- Volume :
- 858
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........e8a822858ebd67944dd36e3d2c428fab
- Full Text :
- https://doi.org/10.4028/www.scientific.net/msf.858.57