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Spatial Distribution of Carrier Concentration in 4H-SiŠ” Crystal Grown by Solution Method

Authors :
Takenobu Sakai
Kenta Murayama
Kenta Aoyagi
Zhen Jiang Wang
Takahiko Kawaguchi
Shunta Harada
Miho Tagawa
Tomohisa Kato
Toru Ujihara
Source :
Materials Science Forum. 858:57-60
Publication Year :
2016
Publisher :
Trans Tech Publications, Ltd., 2016.

Abstract

We investigated the spatial distribution of carrier concentration in n-type 4H-SiC grown by the solution method from the peak frequency of the longitudinal optical phonon-plasmon coupled (LOPC) mode of the Raman spectra on the surface. The carrier concentration at the position of the smooth terrace was higher than the carrier concentration at the position where the macrosteps were formed. This indicates the nitrogen incorporation efficiently occurs on the smooth surface where the density of macrosteps is relatively low. The different incorporation of nitrogen depending on the surface morphology can be understood from the view point of the adsorption time of impurity on the terrace. The present result implies that the uniform surface morphology is necessary to achieve uniform doping concentration in SiC crystal.

Details

ISSN :
16629752
Volume :
858
Database :
OpenAIRE
Journal :
Materials Science Forum
Accession number :
edsair.doi...........e8a822858ebd67944dd36e3d2c428fab
Full Text :
https://doi.org/10.4028/www.scientific.net/msf.858.57