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Photoluminescence study of semipolar {101¯1} InGaN∕GaN multiple quantum wells grown by selective area epitaxy

Authors :
Pei-Cheng Ku
Hongbo Yu
Taeil Jung
L. K. Lee
Source :
Applied Physics Letters. 90:141906
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

Semipolar InGaN∕GaN multiple quantum wells (MQWs) were fabricated on the {101¯1} facets of GaN pyramidal structures by selective area epitaxy. Optical properties of the MQWs were investigated by photoluminescence (PL) in comparison with (0001) MQWs. Compared with (0001) MQWs, the internal electric field in the {101¯1} MQWs was remarkably reduced, the PL peak redshifted monotonically with the increasing temperature, and the internal quantum efficiency was estimated to be improved by a factor of 3. These results suggest that the {101¯1} planes are promising for improving the performance of III-nitride light emitters owing to their surface stability and suppression of polarization effects.

Details

ISSN :
10773118 and 00036951
Volume :
90
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........e83749e742f592adf1d0629bbd538ea9
Full Text :
https://doi.org/10.1063/1.2720302