Back to Search Start Over

Micro-Raman characterization of stress distribution within free standing mono- and poly-crystalline silicon membranes

Authors :
M. Siakavellas
E. Anastassakis
Grigoris Kaltsas
A.G. Nassiopoulos
Source :
Microelectronic Engineering. :469-472
Publication Year :
1998
Publisher :
Elsevier BV, 1998.

Abstract

Stress measurements were performed in a free standing monocrystalline cantilever and a polycrystalline silicon membrane suspended over a deep cavity, using micro-Raman spectroscopy. These micromechanical structures were fabricated using porous silicon as a sacrificial layer. The results show that the stress varies across the membrane and the cantilever, the level of stress in the latter being lower than in the membrane.

Details

ISSN :
01679317
Database :
OpenAIRE
Journal :
Microelectronic Engineering
Accession number :
edsair.doi...........e81f88f225dd7bd5f13700cc5be4c64d
Full Text :
https://doi.org/10.1016/s0167-9317(98)00109-9