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k-resolved electronic structure of buried heterostructure and impurity systems by soft-X-ray ARPES
- Source :
- Journal of Electron Spectroscopy and Related Phenomena. 236:1-8
- Publication Year :
- 2019
- Publisher :
- Elsevier BV, 2019.
-
Abstract
- Angle-resolved photoelectron spectroscopy (ARPES) is the main experimental tool to explore electronic structure of solids resolved in the electron momentum k . Soft-X-ray ARPES (SX-ARPES), operating in a photon energy range around 1 keV, benefits from enhanced probing depth compared to the conventional VUV-range ARPES, and elemental/chemical state specificity achieved with resonant photoemission. These advantages make SX-ARPES ideally suited for buried heterostructure and impurity systems, which are at the heart of current and future electronics. These applications are illustrated here with a few pioneering results, including buried quantum-well states in semiconductor and oxide heterostructures, their bosonic coupling critically affecting electron transport, magnetic impurities in diluted magnetic semiconductors and topological materials, etc. High photon flux and detection efficiency are crucial for pushing the SX-ARPES experiment to these most photon-hungry cases.
- Subjects :
- Materials science
Angle-resolved photoemission spectroscopy
02 engineering and technology
Electron
Electronic structure
Photon energy
01 natural sciences
X-ray photoelectron spectroscopy
Condensed Matter::Superconductivity
0103 physical sciences
Physical and Theoretical Chemistry
Spectroscopy
Radiation
010304 chemical physics
Condensed matter physics
business.industry
Heterojunction
Magnetic semiconductor
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Semiconductor
Condensed Matter::Strongly Correlated Electrons
0210 nano-technology
business
Subjects
Details
- ISSN :
- 03682048
- Volume :
- 236
- Database :
- OpenAIRE
- Journal :
- Journal of Electron Spectroscopy and Related Phenomena
- Accession number :
- edsair.doi...........e8120121aa23073a1212ee096d52301d