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Electroluminescence from Ge‐Doped GaP p—n Junctions
- Source :
- Journal of Applied Physics. 39:1557-1560
- Publication Year :
- 1968
- Publisher :
- AIP Publishing, 1968.
-
Abstract
- The electroluminescence from GaP containing Ge has been studied. p—n junctions were formed by the liquid epitaxy method. The peak of the dominant emission from these diodes is near 1.96 eV at 77°K. The maximum external quantum efficiency at 77°K was 8%. The emission appears to involve Zn and Ge pairs even though these impurities were doped on opposite sides of the junction. It was not possible to ascribe any emission lines to recombination involving Te and Ge. Current, voltage, and intensity dependences of the diodes have been measured. The results indicate that radiative recombination between Zn and Ge at 77°K is predominantly in the space‐charge region. At low currents, photon‐assisting tunneling becomes important.
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 39
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........e7f93871c835f35ac406cdcbebd0aacd