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Segregation Behavior in a Stationary Vertical Zone with Converging Interfaces: Pressure-Induced Segregation Effects

Authors :
A. F. Witt
K. M. Kim
H. C. Gatos
Source :
Journal of The Electrochemical Society. 121:448
Publication Year :
1974
Publisher :
The Electrochemical Society, 1974.

Abstract

Crystal growth and segregation were investigated in a confined vertical melt zone in which the upper solid-melt interface advanced under destabilizing and the lower interface under stabilizing thermal gradients. A technique reported by Kim et al. (1972) was used in the study. The experimental results are discussed, giving attention to interface morphology and growth rate and questions of dopant segregation. Dopant inhomogeneities formed simultaneously in both advancing interfaces can be explained on the basis of pressure induced segregation effects.

Details

ISSN :
00134651
Volume :
121
Database :
OpenAIRE
Journal :
Journal of The Electrochemical Society
Accession number :
edsair.doi...........e7c45a4f81e141391942b4ce8cd6e05d
Full Text :
https://doi.org/10.1149/1.2401835