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Low-Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition
- Source :
- Chemical Vapor Deposition. 10:265-269
- Publication Year :
- 2004
- Publisher :
- Wiley, 2004.
-
Abstract
- We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400°C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor-liquid-solid process. The density of polycrystalline germanium dots is 1.46 × 10 11 cm -2 , which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.
- Subjects :
- Chemistry
business.industry
Process Chemistry and Technology
Analytical chemistry
chemistry.chemical_element
Germanium
Surfaces and Interfaces
General Chemistry
Chemical vapor deposition
Colloidal gold
Quantum dot
Monolayer
Optoelectronics
Inductively coupled plasma
Vapor–liquid–solid method
business
Silicon oxide
Subjects
Details
- ISSN :
- 15213862 and 09481907
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Chemical Vapor Deposition
- Accession number :
- edsair.doi...........e76771c836ac83c3b8b0a4ca80bd7779
- Full Text :
- https://doi.org/10.1002/cvde.200306300