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Low-Temperature Growth of Germanium Quantum Dots on Silicon Oxide by Inductively Coupled Plasma Chemical Vapor Deposition

Authors :
Bau Tong Dai
Jiann Shieh
Hsuen-Li Chen
Tieh Chi Chu
Tsung-Shine Ko
Source :
Chemical Vapor Deposition. 10:265-269
Publication Year :
2004
Publisher :
Wiley, 2004.

Abstract

We report on the fabrication of germanium quantum dots on silicon oxide and their growth mechanism. Germanium quantum dots were deposited by inductively-coupled plasma CVD at 400°C. Gold nanoparticles, attached to silicon oxide through a self-assembled monolayer, were adopted as catalysts to allow access to a vapor-liquid-solid process. The density of polycrystalline germanium dots is 1.46 × 10 11 cm -2 , which is consistent with the density of the gold nanoparticles. The mechanism by which the undesirable gold catalysts are removed during the germanium dot growth process has been elucidated. This technique provides a low-temperature process for the fabrication of devices consisting of germanium quantum dots on an insulator surface.

Details

ISSN :
15213862 and 09481907
Volume :
10
Database :
OpenAIRE
Journal :
Chemical Vapor Deposition
Accession number :
edsair.doi...........e76771c836ac83c3b8b0a4ca80bd7779
Full Text :
https://doi.org/10.1002/cvde.200306300