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Characterization of the crystallographic microstructure of the stress-induced void in Cu interconnects

Authors :
Hyo-Jong Lee
Suk Hoon Kang
Jae Hun Kim
Yigil Cho
Jeong-Yun Sun
Do Hyun Kim
Heung Nam Han
Kyu Hwan Oh
Source :
Applied Physics Letters. 92:141917
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

Stepwise cross-sectional crystallographic measurement was performed on the stress-induced void (SIV) of copper interconnect and it was possible to investigate the three-dimensional crystallographic structures near the submicron scale void. The void mainly happened at a triple junction of grain boundaries and there were at least two grains with high biaxial elastic modulus near the triple junction. The preferred site for the SIV could well be understood by considering the elastic anisotropy of each grain and the grain boundary type.

Details

ISSN :
10773118 and 00036951
Volume :
92
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........e72c692b469e96d8898561a6a76dfb2c
Full Text :
https://doi.org/10.1063/1.2906902