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Reactive ion etching of via holes for GaAs high electron mobility transistors and monolithic microwave integrated circuits using Cl2/BCl3/Ar gas mixtures

Authors :
P.M. Smith
Karen J. Nordheden
D. W. Ferguson
Source :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:1879
Publication Year :
1993
Publisher :
American Vacuum Society, 1993.

Abstract

A process for through‐the‐wafer via hole connections to each individual source contact for monolithic microwave and millimeter wave integrated circuits and power high electron mobility transistors has been developed using reactive ion etching in Cl2/BCl3/Ar gas mixtures. Placing vias in this manner eliminates the need for source airbridges, which minimizes source inductance and results in increased gain and efficiency. The GaAs etch rate and resultant etch profiles have been studied as functions of bias voltage, gas mixture, flow rate, via mask dimension, and etch time.

Details

ISSN :
0734211X
Volume :
11
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Accession number :
edsair.doi...........e633da9454a8a7e8fc79cb2ff8b2c4f2
Full Text :
https://doi.org/10.1116/1.586515