Optical properties and deep levels in annealed Si1−xMnx bulk materials

The optical properties and the deep levels in bulk Si 1− x Mn x formed by using an implantation and annealing method were investigated. Transmission electron microscopy, X-ray diffraction, and Hall-effect measurements showed that the annealed bulk Si 1− x Mn x samples were p-type crystalline semiconductors. The photoluminescence spectra for the annealed bulk Si 1− x Mn x material showed luminescence peaks corresponding to excitons bound to neutral acceptors and related to dislocations due to the existence of Mn impurities. Deep-level transient spectroscopy results for the annealed bulk Si 1− x Mn x showed deep levels related to the interstitial and substitutial sites of the Mn + ions. These results can help improve understanding of the optical properties and the deep levels in annealed bulk Si 1− x Mn x material.