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Reliability Improvement and Effective Switching Layer Model of Thin‐Film MoS 2 Memristors

Details

ISSN :
16163028 and 1616301X
Database :
OpenAIRE
Journal :
Advanced Functional Materials
Accession number :
edsair.doi...........e5a893ad6b0d8b77d1499c47d08b6c97