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Understanding the distribution of iron in multicrystalline silicon after emitter formation: Theoretical model and experiments

Authors :
Holger Habenicht
W. Warta
J. Schön
Martin C. Schubert
Source :
Journal of Applied Physics. 109:063717
Publication Year :
2011
Publisher :
AIP Publishing, 2011.

Abstract

We studied the behavior of iron in multicrystalline silicon during phosphorus diffusion by spatially resolved measurements and physical modeling. We present improvements to the previously used models for internal gettering in multicrystalline silicon and phosphorus diffusion gettering. 2-dimensional simulations are used for optimization of the phosphorus diffusion processes for intentionally contaminated wafers regarding the iron distribution, without changing the emitter characteristics. Simulations and experimental results show a reduced interstitial iron concentration after an additional low temperature step at the end of the phosphorus diffusion. The concentration of iron precipitates was reduced by a short annealing at 900°C before the phosphorus diffusion, leading to a carrier lifetime three times higher than compared to the standard process.

Details

ISSN :
10897550 and 00218979
Volume :
109
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi...........e582b518f23654c59c46568c1b2438d3
Full Text :
https://doi.org/10.1063/1.3553858