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Diffusion studies of Ra and Pb in GaAs by the alpha-particle energy loss method
- Source :
- Journal of Applied Physics. 84:6003-6006
- Publication Year :
- 1998
- Publisher :
- AIP Publishing, 1998.
-
Abstract
- The temperature dependence of the diffusion of lead in GaAs is determined by measuring the modification to the energy spectrum of emitted alpha particles from the decay chain of implanted 212Pb atoms. Diffusion rates are measured for temperatures up to 900 °C. Higher rates are observed for the diffusion in silicon-doped GaAs than in semi-insulating GaAs. An upper limit for the diffusion of radium in GaAs is similarly obtained from the decay of the 224Ra isotope. Implications for the use of implanted alpha sources for thickness monitoring during epitaxial film growth by the alpha-particle energy loss method are discussed.
- Subjects :
- congenital, hereditary, and neonatal diseases and abnormalities
Materials science
Isotope
Silicon
nutritional and metabolic diseases
General Physics and Astronomy
chemistry.chemical_element
Alpha particle
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Gallium arsenide
Radium
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Decay chain
Diffusion (business)
Atomic physics
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 84
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........e52a45580f16a95f0de42867350edb57