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Monte Carlo simulation of growth of nanowhiskers
- Source :
- Semiconductors. 44:127-132
- Publication Year :
- 2010
- Publisher :
- Pleiades Publishing Ltd, 2010.
-
Abstract
- The growth of silicon nanowhiskers on the Si (111) surface activated with Au is studied by Monte Carlo simulation. The dependences of the rate of growth of whiskers on the temperature, deposition rate, and catalyst droplet diameter are obtained, and the morphological properties of the growing wirelike nanocrystal are studied. In addition to the growth of nanowhiskers, a number of experimentally observed effects, such as migration of the droplet from the whisker top, faceting of the whisker sidewalls, and branching are established for the model system. It is shown that, under certain conditions of wetting of the whisker material with the catalyst, formation of hollow nanowhiskers is possible.
- Subjects :
- Materials science
Silicon
Whiskers
Monte Carlo method
chemistry.chemical_element
Nanotechnology
Condensed Matter Physics
Branching (polymer chemistry)
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Faceting
chemistry
Nanocrystal
Whisker
Wetting
Composite material
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 44
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........e51d2f4c92b2a1baee3f377defc56c46
- Full Text :
- https://doi.org/10.1134/s1063782610010227