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Monte Carlo simulation of growth of nanowhiskers

Authors :
Alla G. Nastovjak
Z. Sh. Yanovitskaya
I. L. Shwartz
Igor G. Neizvestny
Source :
Semiconductors. 44:127-132
Publication Year :
2010
Publisher :
Pleiades Publishing Ltd, 2010.

Abstract

The growth of silicon nanowhiskers on the Si (111) surface activated with Au is studied by Monte Carlo simulation. The dependences of the rate of growth of whiskers on the temperature, deposition rate, and catalyst droplet diameter are obtained, and the morphological properties of the growing wirelike nanocrystal are studied. In addition to the growth of nanowhiskers, a number of experimentally observed effects, such as migration of the droplet from the whisker top, faceting of the whisker sidewalls, and branching are established for the model system. It is shown that, under certain conditions of wetting of the whisker material with the catalyst, formation of hollow nanowhiskers is possible.

Details

ISSN :
10906479 and 10637826
Volume :
44
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........e51d2f4c92b2a1baee3f377defc56c46
Full Text :
https://doi.org/10.1134/s1063782610010227