Introduction to SiC and Thermoelectrical Properties

This chapter presents the general background on silicon carbide as a functional semiconductor for sensors operating in harsh environments. The fundamental stacking orders of different SiC polytypes with common growth methods and conditions are introduced, with a focus on cubic silicon carbide (3C-SiC) and hexagonal silicon carbide (e.g. 4H-SiC and 6H-SiC). This chapter also introduces the thermoelectrical effect in SiC with respect to sensing properties at high temperatures. The importance of SiC materials with a wide range of applications in harsh environments will be mentioned.