A smartphone SP10T T/R switch in 180-nm SOI CMOS with 8kV+ ESD protection by co-design

This paper reports the first 8kV+ ESD-protected SP10T transmit/receive (T/R) antenna switch for quad-band (0.85/0.9/1.8/1.9-GHz) GSM and multiple W-CDMA smartphones fabricated in an 180-nm SOI CMOS. A novel physics-based switch-ESD co-design methodology is applied to ensure full-chip optimization for a SP10T test chip and its ESD protection circuit simultaneously.