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High pressure electrical transport measurements of Cs2MoS4 and KTbP2Se6 and X-ray diffraction study of Cs2MoS4
- Source :
- Solid State Communications. 129:511-514
- Publication Year :
- 2004
- Publisher :
- Elsevier BV, 2004.
-
Abstract
- We report the results of electrical resistance measurements at high pressures on Cs 2 MoS 4 and KTbP 2 Se 6 . The results of high pressure X-ray diffraction study of Cs 2 MoS 4 are also presented. Interestingly, in the case of Cs 2 MoS 4 the resistance vs. pressure follows the behavior of the absorption edge vs. pressure obtained from our optical measurements lending further support to a direct–indirect band crossing. In the case of KTbP 2 Se 6 ,the phase transition at about 9.2 GPa is reflected in a sharp drop of the resistance. In addition we report the pressure dependence of the lattice constants as well as the equation of state of Cs 2 MoS 4 .
- Subjects :
- Diffraction
Equation of state
Phase transition
business.industry
Chemistry
Analytical chemistry
General Chemistry
Condensed Matter Physics
Lattice constant
Optics
Absorption edge
Electrical resistance and conductance
Electrical resistivity and conductivity
X-ray crystallography
Materials Chemistry
business
Subjects
Details
- ISSN :
- 00381098
- Volume :
- 129
- Database :
- OpenAIRE
- Journal :
- Solid State Communications
- Accession number :
- edsair.doi...........e3f0de4e442103cbb79d87e35e4fc1bd