High pressure electrical transport measurements of Cs2MoS4 and KTbP2Se6 and X-ray diffraction study of Cs2MoS4

We report the results of electrical resistance measurements at high pressures on Cs 2 MoS 4 and KTbP 2 Se 6 . The results of high pressure X-ray diffraction study of Cs 2 MoS 4 are also presented. Interestingly, in the case of Cs 2 MoS 4 the resistance vs. pressure follows the behavior of the absorption edge vs. pressure obtained from our optical measurements lending further support to a direct–indirect band crossing. In the case of KTbP 2 Se 6 ,the phase transition at about 9.2 GPa is reflected in a sharp drop of the resistance. In addition we report the pressure dependence of the lattice constants as well as the equation of state of Cs 2 MoS 4 .