InGaAs MOSCAPs and self-aligned inversion-channel MOSFETs with Al2O3/Ga2O3(Gd2O3) as a gate dielectric

Ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) dual-layer gate dielectrics were used to fabricate metal-oxide-semiconductor capacitors (MOSCAPs) and MOS field-effect-transistors (MOSFETs). Excellent electrical properties of well-behaved C-V characteristics with very small frequency dispersions, a very low leakage current density of 2.5×10-9 A/cm2 at Vg = Vfb + 1V, and a low Dit of 2.5×1011 cm-2eV-1 near the mid-gap, have been demonstrated in In0.2Ga0.8As MOSCAPs, which were RTA to 850°. Moreover, 1μm-gate-length self-aligned inversion-channel In0.53Ga0.47As MOSFETs have achieved record-high maximum drain current of 1.05 mA/μm and peak transconductance of 714 μS/μm. Both device performances are the highest among all-types of enhancement mode MOSFETs, fabricated by self-aligned or non-self-aligned process. Various enhancement-mode MOSFETs in the configurations of inversion-channel and non-inversion-channel, fabricated with self-aligned and non-self-aligned processes are compared.