Back to Search
Start Over
Contribution of Surface Defects to the Interface Conductivity of SrTiO 3 /LaAlO 3
- Source :
- Chinese Physics Letters. 33:087301
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- Based on the first-principles method, the structural stability and the contribution of point defects such as O, Sr or Ti vacancies on two-dimensional electron gas of n- and p-type LaAlO3/SrTiO3 interfaces are investigated. The results show that O vacancies at p-type interfaces have much lower formation energies, and Sr or Ti vacancies at n-type interfaces are more stable than the ones at p-type interfaces under O-rich conditions. The calculated densities of states indicate that O vacancies act as donors and give a significant compensation to hole carriers, resulting in insulating behavior at p-type interfaces. In contrast, Sr or Ti vacancies tend to trap electrons and behave as acceptors. Sr vacancies are the most stable defects at high oxygen partial pressures, and the Sr vacancies rather than Ti vacancies are responsible for the insulator-metal transition of n-type interface. The calculated results can be helpful to understand the tuned electronic properties of LaAlO3/SrTiO3 heterointerfaces.
- Subjects :
- Chemical substance
Materials science
Condensed matter physics
General Physics and Astronomy
Nanotechnology
02 engineering and technology
Partial pressure
Electron
Conductivity
021001 nanoscience & nanotechnology
01 natural sciences
Crystallographic defect
Structural stability
0103 physical sciences
010306 general physics
0210 nano-technology
Science, technology and society
Fermi gas
Subjects
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........e3d7b0be57abd6c0d4804af2d1f8661b