Development of a 128 X 4 HgCdTe hybrid FPAs using MBE grown on GaAs

A hybrid HgCdTe 128 X 4 FPA for LWIR detection was fabricated. HgCdTe epilayers were grown on GaAs substrates by MBE. The n+ on p photodiodes were formed by boron ion implantation. The detector array was passivated with a combination of CdTe and ZnS layers to provide a harmonious transit range between HgCdTe surface and passivation layers. And the combination layers of CdTe and ZnS present a low charge densities and very good electrical properties. The mean product of zero bias differential resistance and area for the diode array was measured to be 3 (Omega) -cm2 with a cutoff wavelength of 10.05 micrometers . TDI CCD readout circuits designed and fabricated especially for this 128 X 4 LWIR FPA with charge capacity of 1 to 1.5 X 107 electrons. This shows the characteristics of HgCdTe detector array of the epilayers grown by MBE on GaAs substrates, and also indicates than n+ p junction formation process and the surface passivation procedure are useful in the fabrication of HgCdTe FPAs.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.