n-Si/i-p-i SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy

MLA

Pei-Hsin Tsien, et al. “N-Si/i-p-i SiGe/n-Si Structure for SiGe Microwave Power Heterojunction Bipolar Transistor Grown by Ultra-High-Vacuum Chemical Molecular Epitaxy.” Journal of Applied Physics, vol. 86, Aug. 1999, pp. 1463–66. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........e3672ea764683b55bf2ea4fb1e72ce33&authtype=sso&custid=ns315887.

APA

Pei-Hsin Tsien, Jinshu Zhang, Hongyong Jia, Q. Y. Lin, Peiyi Chen, M. X. Feng, Tai-Chin Lo, & Xiaojun Jin. (1999). n-Si/i-p-i SiGe/n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy. Journal of Applied Physics, 86, 1463–1466.

Chicago

Pei-Hsin Tsien, Jinshu Zhang, Hongyong Jia, Q. Y. Lin, Peiyi Chen, M. X. Feng, Tai-Chin Lo, and Xiaojun Jin. 1999. “N-Si/i-p-i SiGe/n-Si Structure for SiGe Microwave Power Heterojunction Bipolar Transistor Grown by Ultra-High-Vacuum Chemical Molecular Epitaxy.” Journal of Applied Physics 86 (August): 1463–66. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........e3672ea764683b55bf2ea4fb1e72ce33&authtype=sso&custid=ns315887.